Skip to Content

College of Engineering and Computing


Representative Publications

Publications

  • S. Muhtadi, S. Hwang, A. Coleman, F. Asif; G. Simin, MVS Chandrashekhar, M. Asif Khan,
    High Electron Mobility Transistors with Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates, IEEE Electron Device Letters, Volume: PP, Issue: 99, Pages: 1 - 1, (2017) DOI: 10.1109/LED.2017.2701651
  • M. Islam and G. Simin, Compact Model for Current Collapse in GaN-HEMT Power Switches, International Journal of High Speed Electronics and Systems (IJHSES), Vol. 25, Nos. 1 & 2 (2016) 1640001 (7 pages)
  • M. Islam and G. Simin, Bulk Current Model for GaN-on-Si High Electron Mobility Transistors, International Journal of High Speed Electronics and Systems (IJHSES), Vol. 25, Nos. 1 & 2 (2016) 1640002 (11 pages)
  • R. Gaska, M. Gaevski, R. Jain, J. Deng, M. Islam, G. Simin, M. Shur, Novel AlInN/GaN integrated circuits operating up to 500 C, Solid-State Electronics 113 (2015) 22–27
  • M. Gaevski, J. Deng, A. Dobrinsky, R. Gaska, M. Shur, and G. Simin, Static and transient characteristics of GaN power HFETs with low-conducting coating, Phys. Status Solidi C 11, No. 3–4, 866–870 (2014)
  • M. Gaevski, J. Deng, R. Gaska, M. Shur, and G. Simin, GaN microwave varactors
    with insulated electrodes, Phys. Status Solidi C 11, No. 3–4, 898–901 (2014)
  • Simin, G.S. ; Islam, M. ; Gaevski, M. ; Deng, J. ; Gaska, R. ; Shur, M.S., Low RC-Constant Perforated-Channel HFET, IEEE Electron Device Letters, Vol. 35 , Issue: 4, pp: 449 - 451 (2014)
  • G Simin, F Jahan, J Yang, M Gaevski, X Hu, J Deng, R Gaska and M Shur, III-nitride microwave control devices and ICs, Semicond. Sci. Technol. 28 (2013) 074008 (8pp)
  • F. Jahan, Y.-H.Yang, ,M. Gaevski, J. Deng, R. Gaska, M. Shur and G. Simin, 2- to 20-GHz Switch Using III-Nitride Capacitively Coupled Contact Varactors, IEEE Electron Dev. Lett., V.34, pp 208-210 (2013)
  • F. Jahan, M. Gaevski, J. Deng, R. Gaska, M. Shur and G. Simin, RF Power Limiter using Capacitively -Coupled Contacts III-Nitride Varactor, Electronics Letters, Vol. 48 No. 23, pp. 1480-1481 (2012)
  • B.M. Khan, G. S. Simin, Third-order nonlinearity compensation in field effect transistors, Electron. Lett. V. 47, Issue 24, p.1343–1345 (2011)
  • A.Sattu, D.Billingsley, J.Deng, J.Yang, G. Simin, M Shur, R. Gaska, Low-loss AlInN/GaN microwave switch, Electronics Letters, V 47 , Issue:15, pp. 863 - 865 (2011)
  • A. Sattu, J. Yang, R. Gaska, B. Khan, M. Shur and G. Simin, Small- and Large-signal Performance of III-Nitride RF Switches with Hybrid Fast/Slow Gate Design, IEEE Microwave and Wireless Components Letters, V. 21, N6 pp.305 - 307, 2011
  • B. Khan, G. Simin, Contact and Channel 3rd Order Nonlinearity in III-N HFETs, IEEE Trans. El. Dev., V. 58, N7, pp. 1957-1962 (2011)
  • A. Sattu, J. Deng, D. Billingsley, J. Yang, M. Shur, R. Gaska and G. Simin, Enhanced power and breakdown in III-N RF Switches with Slow Gate, IEEE El. Dev. Lett., V32, N6, pp. 749-751 (2011)